Straight silicon carbide heating elements are manufactured from high-purity silicon carbide through sintering at over 2200℃, featuring uniform diameter for easy installation. Ideal for industrial resistance furnaces, tunnel kilns, and heat treatment equipment, they withstand temperatures up to 1450℃ with excellent oxidation resistance, rapid heating, long service life, and minimal high-temperature deformation. Widely used in metallurgy, ceramics, glass, electronics, and chemical industries.

U-Type silicon carbide heating elements feature a uniform diameter with parallel terminals and a U-shaped hot zone at the bottom. Ideal for deep furnace chambers requiring concentrated top wiring, they are widely used in large industrial kilns, semiconductor diffusion furnaces, glass melting furnaces, and laboratory furnaces. Withstanding temperatures up to 1450℃, they deliver excellent oxidation resistance, rapid heating, long service life, and minimal high-temperature deformation.
 

​HHSIC H-Type (U-shaped) silicon carbide heating elements feature a parallel-leg design with uniform diameter, offering compact structure and easy installation. Ideal for deep furnace chambers or applications requiring concentrated wiring from the top or bottom, they are widely used in large industrial kilns, laboratory furnaces, glass melting, and semiconductor diffusion furnaces. Withstanding temperatures up to 1450℃, they deliver excellent oxidation resistance, rapid heating, long service life, and minimal high-temperature deformation.

DB Type (Dumbbell) silicon carbide heating elements feature a special structure with enlarged ends and a slender center, resembling a dumbbell. The slender central section serves as the hot zone while the thicker ends act as cold ends, effectively reducing cold-end resistance, minimizing energy loss, and improving thermal efficiency. Ideal for applications with limited furnace space, high power density requirements, or specialized temperature profiles, they are widely used in precision heat treatment, semiconductor diffusion furnaces, glass melting, and laboratory high-temperature equipment. Withstanding temperatures up to 1450℃, they deliver rapid heating, high thermal efficiency, and long service life.
 

UX Slot silicon carbide heating elements feature specially machined axial grooves on the rod surface. The slot design significantly increases the effective heating area, optimizes thermal radiation directionality, reduces surface load, and extends service life. Ideal for applications requiring uniform temperature fields, low surface load, or specialized thermal radiation characteristics, they are widely used in large industrial kilns, glass melting tanks, ceramic sintering, and heat treatment equipment. 

SC silicon carbide heating elements feature a spiral groove machined on the surface of a uniform-diameter SiC rod. The spiral design significantly increases the heating surface area, enhances power density per unit length, and improves thermal radiation efficiency. Ideal for applications requiring localized high power density or specialized temperature profiles, they are widely used in precision heat treatment, semiconductor diffusion furnaces, glass melting, and laboratory high-temperature equipment. Withstanding temperatures up to 1450℃, they deliver rapid heating, high thermal efficiency, and excellent temperature uniformity.

L-Type molybdenum disilicide heating elements feature a U-shaped configuration with cold ends bent at a right angle outward or inward, forming a compact L-shaped terminal. Ideal for applications with limited furnace top space, side wiring requirements, or special installation angles, they are widely used in semiconductor equipment, glass melting furnaces, ceramic sintering furnaces, and laboratory high-temperature furnaces. In oxidizing atmospheres, they can operate at temperatures up to 1700-1800℃, delivering flexible installation, high space utilization, and excellent oxidation resistance.L-Type molybdenum disilicide heating elements feature a U-shaped configuration with cold ends bent at a right angle outward or inward, forming a compact L-shaped terminal. Ideal for applications with limited furnace top space, side wiring requirements, or special installation angles, they are widely used in semiconductor equipment, glass melting furnaces, ceramic sintering furnaces, and laboratory high-temperature furnaces. In oxidizing atmospheres, they can operate at temperatures up to 1700-1800℃, delivering flexible installation, high space utilization, and excellent oxidation resistance.

U-Type molybdenum disilicide（MoSi2) heating elements are manufactured from high-purity MoSi₂ through high-temperature sintering, featuring a U-shaped configuration with parallel terminals. Ideal for deep furnace chambers requiring concentrated top wiring, they are widely used in semiconductor diffusion furnaces, glass melting furnaces, ceramic sintering furnaces, and high-temperature laboratory furnaces. In oxidizing atmospheres, they can operate at temperatures up to 1700-1800℃, delivering excellent oxidation resistance, rapid heating, long service life, and outstanding high-temperature stability.U-Type molybdenum disilicide（MoSi2) heating elements are manufactured from high-purity MoSi₂ through high-temperature sintering, featuring a U-shaped configuration with parallel terminals. Ideal for deep furnace chambers requiring concentrated top wiring, they are widely used in semiconductor diffusion furnaces, glass melting furnaces, ceramic sintering furnaces, and high-temperature laboratory furnaces. In oxidizing atmospheres, they can operate at temperatures up to 1700-1800℃, delivering excellent oxidation resistance, rapid heating, long service life, and outstanding high-temperature stability.

We accept custom SiC&MoSi2 heating element  based on either technical drawings or parameter lists.
Ø12-54mm Diameter Custom Shapes
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